MPSW51ARLRP Overview

As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 60 @ 100mA 1V.With a collector emitter saturation voltage of -700mV, it offers maximum design flexibility.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 700mV @ 100mA, 1A.The base voltage of the emitter can be kept at 5V to achieve high efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is -1A.As a result, the part has a transition frequency of 50MHz.Single BJT transistor is possible to have a collector current as low as 1A volts at Single BJT transistors maximum.

MPSW51ARLRP Features

the DC current gain for this device is 60 @ 100mA 1V
a collector emitter saturation voltage of -700mV
the vce saturation(Max) is 700mV @ 100mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is -1A
a transition frequency of 50MHz

MPSW51ARLRP Applications

There are a lot of ON Semiconductor MPSW51ARLRP applications of single BJT transistors.

• Muting
• Interface
• Inverter
• Driver