KSC1845PTA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website
SOT-23
KSC1845PTA Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Box (TB)
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Terminal Finish
MATTE TIN
Additional Feature
LOW NOISE
Terminal Position
BOTTOM
Peak Reflow Temperature (Cel)
NOT APPLICABLE
[email protected] Reflow Temperature-Max (s)
NOT APPLICABLE
Pin Count
3
JESD-30 Code
O-PBCY-T3
Qualification Status
COMMERCIAL
Number of Elements
1
Configuration
SINGLE
Power - Max
500mW
Transistor Application
AMPLIFIER
Polarity/Channel Type
NPN
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
200 @ 1mA 6V
Current - Collector Cutoff (Max)
50nA ICBO
Vce Saturation (Max) @ Ib, Ic
300mV @ 1mA, 10mA
Voltage - Collector Emitter Breakdown (Max)
120V
Current - Collector (Ic) (Max)
50mA
Transition Frequency
110MHz
Frequency - Transition
110MHz
RoHS Status
ROHS3 Compliant
KSC1845PTA Product Details
KSC1845PTA Overview
In this device, the DC current gain is 200 @ 1mA 6V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 300mV @ 1mA, 10mA.In the part, the transition frequency is 110MHz.A 120V maximal voltage - Collector Emitter Breakdown is present in the device.
KSC1845PTA Features
the DC current gain for this device is 200 @ 1mA 6V the vce saturation(Max) is 300mV @ 1mA, 10mA a transition frequency of 110MHz
KSC1845PTA Applications
There are a lot of Rochester Electronics, LLC KSC1845PTA applications of single BJT transistors.