BDW83B-S datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Bourns Inc. stock available on our website
SOT-23
BDW83B-S Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-218-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-65°C~150°C TJ
Packaging
Tube
Published
2011
JESD-609 Code
e1
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
TIN SILVER COPPER
Max Power Dissipation
3.5W
Terminal Position
SINGLE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Base Part Number
BDW83
Pin Count
3
Qualification Status
Not Qualified
Number of Elements
1
Polarity
NPN
Case Connection
COLLECTOR
Power - Max
3.5W
Transistor Application
SWITCHING
Transistor Type
NPN - Darlington
Collector Emitter Voltage (VCEO)
4V
Max Collector Current
15A
DC Current Gain (hFE) (Min) @ Ic, Vce
750 @ 6A 3V
Current - Collector Cutoff (Max)
1mA
Vce Saturation (Max) @ Ib, Ic
4V @ 150mA, 15A
Collector Emitter Breakdown Voltage
80V
Collector Emitter Saturation Voltage
2.5V
Collector Base Voltage (VCBO)
80V
Emitter Base Voltage (VEBO)
5V
RoHS Status
ROHS3 Compliant
BDW83B-S Product Details
BDW83B-S Overview
DC current gain in this device equals 750 @ 6A 3V, which is the ratio of the base current to the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 2.5V.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 4V @ 150mA, 15A.A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.The maximum collector current is 15A volts.
BDW83B-S Features
the DC current gain for this device is 750 @ 6A 3V a collector emitter saturation voltage of 2.5V the vce saturation(Max) is 4V @ 150mA, 15A the emitter base voltage is kept at 5V
BDW83B-S Applications
There are a lot of Bourns Inc. BDW83B-S applications of single BJT transistors.