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BU426-S

BU426-S

BU426-S

Bourns Inc.

BU426-S datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Bourns Inc. stock available on our website

SOT-23

BU426-S Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-218-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -65°C~150°C TJ
Packaging Bulk
Published 1993
JESD-609 Code e1
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish TIN SILVER COPPER
Max Power Dissipation 70W
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number BU426
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE
Power Dissipation 70W
Case Connection COLLECTOR
Transistor Application SWITCHING
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 375V
Max Collector Current 6A
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 600mA 5V
Current - Collector Cutoff (Max) 1mA
Vce Saturation (Max) @ Ib, Ic 3V @ 1.25A, 4A
Collector Emitter Breakdown Voltage 375V
Collector Base Voltage (VCBO) 800V
RoHS Status ROHS3 Compliant
BU426-S Product Details

BU426-S Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 30 @ 600mA 5V DC current gain.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 3V @ 1.25A, 4A.Single BJT transistor is possible to have a collector current as low as 6A volts at Single BJT transistors maximum.

BU426-S Features


the DC current gain for this device is 30 @ 600mA 5V
the vce saturation(Max) is 3V @ 1.25A, 4A

BU426-S Applications


There are a lot of Bourns Inc. BU426-S applications of single BJT transistors.

  • Interface
  • Inverter
  • Driver
  • Muting

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