BU426A-S datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Bourns Inc. stock available on our website
SOT-23
BU426A-S Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-218-3
Number of Pins
3
Supplier Device Package
SOT-93
Operating Temperature
-65°C~150°C TJ
Packaging
Bulk
Published
1993
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
70W
Base Part Number
BU426
Number of Elements
1
Polarity
NPN
Power Dissipation
70W
Power - Max
70W
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
400V
Max Collector Current
6A
DC Current Gain (hFE) (Min) @ Ic, Vce
30 @ 600mA 5V
Current - Collector Cutoff (Max)
1mA
Vce Saturation (Max) @ Ib, Ic
3V @ 1.25A, 4A
Collector Emitter Breakdown Voltage
400V
Voltage - Collector Emitter Breakdown (Max)
400V
Current - Collector (Ic) (Max)
6A
Collector Base Voltage (VCBO)
900V
RoHS Status
ROHS3 Compliant
BU426A-S Product Details
BU426A-S Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 30 @ 600mA 5V.When VCE saturation is 3V @ 1.25A, 4A, transistor means Ic has reached transistors maximum value (saturated).Product comes in SOT-93 supplier package.There is a 400V maximal voltage in the device due to collector-emitter breakdown.During maximum operation, collector current can be as low as 6A volts.
BU426A-S Features
the DC current gain for this device is 30 @ 600mA 5V the vce saturation(Max) is 3V @ 1.25A, 4A the supplier device package of SOT-93
BU426A-S Applications
There are a lot of Bourns Inc. BU426A-S applications of single BJT transistors.