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TIP29A-S

TIP29A-S

TIP29A-S

Bourns Inc.

TIP29A-S datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Bourns Inc. stock available on our website

SOT-23

TIP29A-S Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Operating Temperature-65°C~150°C TJ
PackagingTube
Published 1993
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory Other Transistors
Max Power Dissipation2W
Base Part Number TIP29
Configuration Single
Power - Max 2W
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 700mV
Max Collector Current 1A
DC Current Gain (hFE) (Min) @ Ic, Vce 15 @ 1A 4V
Current - Collector Cutoff (Max) 300μA
Vce Saturation (Max) @ Ib, Ic 700mV @ 125mA, 1A
Collector Emitter Breakdown Voltage60V
Collector Base Voltage (VCBO) 100V
Radiation HardeningNo
RoHS StatusROHS3 Compliant
In-Stock:2330 items

TIP29A-S Product Details

TIP29A-S Overview


In this device, the DC current gain is 15 @ 1A 4V, which is the ratio between the base current and the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 700mV @ 125mA, 1A.The maximum collector current is 1A volts.

TIP29A-S Features


the DC current gain for this device is 15 @ 1A 4V
the vce saturation(Max) is 700mV @ 125mA, 1A

TIP29A-S Applications


There are a lot of Bourns Inc. TIP29A-S applications of single BJT transistors.

  • Interface
  • Muting
  • Driver
  • Inverter

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