TIP101G Overview

The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 1000 @ 3A 4V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 2V, which allows maximum flexibilSingle BJT transistory in design.A VCE saturation (Max) of 2.5V @ 80mA, 8A means Ic has reached its maximum value(saturated).Emitter base voltages of 5V can achieve high levels of efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 8A current rating.In extreme cases, the collector current can be as low as 8A volts.

TIP101G Features

the DC current gain for this device is 1000 @ 3A 4V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 2.5V @ 80mA, 8A
the emitter base voltage is kept at 5V
the current rating of this device is 8A

TIP101G Applications

There are a lot of ON Semiconductor TIP101G applications of single BJT transistors.

• Interface
• Driver
• Muting
• Inverter