BCV29E6327HTSA1 Overview

In this device, the DC current gain is 20000 @ 100mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 1V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1V @ 100μA, 100mA.If the emitter base voltage is kept at 10V, a high level of efficiency can be achieved.In this part, there is a transition frequency of 150MHz.Breakdown input voltage is 30V volts.Maximum collector currents can be below 500mA volts.

BCV29E6327HTSA1 Features

the DC current gain for this device is 20000 @ 100mA 5V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 100μA, 100mA
the emitter base voltage is kept at 10V
a transition frequency of 150MHz

BCV29E6327HTSA1 Applications

There are a lot of Infineon Technologies BCV29E6327HTSA1 applications of single BJT transistors.

• Interface
• Muting
• Driver
• Inverter