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TIP3055-S

TIP3055-S

TIP3055-S

Bourns Inc.

TIP3055-S datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Bourns Inc. stock available on our website

SOT-23

TIP3055-S Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-218-3
Number of Pins 3
Supplier Device Package SOT-93
Operating Temperature -65°C~150°C TJ
Packaging Tube
Published 1993
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -65°C
Max Power Dissipation 3.5W
Base Part Number TIP30
Number of Elements 1
Polarity NPN
Power Dissipation 90W
Power - Max 3.5W
Transistor Type NPN
Collector Emitter Voltage (VCEO) 60V
Max Collector Current 15A
DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 4A 4V
Current - Collector Cutoff (Max) 700μA
Vce Saturation (Max) @ Ib, Ic 3V @ 3.3A, 10A
Collector Emitter Breakdown Voltage 60V
Voltage - Collector Emitter Breakdown (Max) 60V
Current - Collector (Ic) (Max) 15A
Collector Base Voltage (VCBO) 100V
Emitter Base Voltage (VEBO) 7V
RoHS Status ROHS3 Compliant
TIP3055-S Product Details

TIP3055-S Overview


This device has a DC current gain of 20 @ 4A 4V, which is the ratio between the base current and the collector current.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 3V @ 3.3A, 10A.The emitter base voltage can be kept at 7V for high efficiency.Product comes in the supplier's device package SOT-93.The device exhibits a collector-emitter breakdown at 60V.Maximum collector currents can be below 15A volts.

TIP3055-S Features


the DC current gain for this device is 20 @ 4A 4V
the vce saturation(Max) is 3V @ 3.3A, 10A
the emitter base voltage is kept at 7V
the supplier device package of SOT-93

TIP3055-S Applications


There are a lot of Bourns Inc. TIP3055-S applications of single BJT transistors.

  • Muting
  • Inverter
  • Interface
  • Driver

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