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BC 856BW H6327

  • BC 856BW H6327
  • BC 856BW H6327

BC 856BW H6327

BC 856BW H6327

Infineon Technologies

BC 856BW H6327 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Infineon Technologies stock available on our website

SOT-23

BC 856BW H6327 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Surface Mount
Package / Case SC-70, SOT-323
Surface Mount YES
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2010
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Additional Feature LOW NOISE
Terminal Position DUAL
Terminal Form GULL WING
Reach Compliance Code compliant
Base Part Number BC856
JESD-30 Code R-PDSO-G3
Number of Elements 1
Configuration SINGLE
Power - Max 250mW
Transistor Application AMPLIFIER
Polarity/Channel Type PNP
Transistor Type PNP
DC Current Gain (hFE) (Min) @ Ic, Vce 220 @ 2mA 5V
Current - Collector Cutoff (Max) 15nA ICBO
Vce Saturation (Max) @ Ib, Ic 650mV @ 5mA, 100mA
Voltage - Collector Emitter Breakdown (Max) 65V
Current - Collector (Ic) (Max) 100mA
Transition Frequency 250MHz
Frequency - Transition 250MHz
BC 856BW H6327 Product Details

BC 856BW H6327 Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 220 @ 2mA 5V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.250MHz is present in the transition frequency.The device has a 65V maximal voltage - Collector Emitter Breakdown.

BC 856BW H6327 Features


the DC current gain for this device is 220 @ 2mA 5V
the vce saturation(Max) is 650mV @ 5mA, 100mA
a transition frequency of 250MHz

BC 856BW H6327 Applications


There are a lot of Infineon Technologies BC 856BW H6327 applications of single BJT transistors.

  • Muting
  • Driver
  • Inverter
  • Interface

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