TIP33-S datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Bourns Inc. stock available on our website
SOT-23
TIP33-S Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-218-3
Number of Pins
3
Supplier Device Package
SOT-93
Operating Temperature
-65°C~150°C TJ
Packaging
Tube
Published
1993
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Max Power Dissipation
3.5W
Base Part Number
TIP33
Polarity
NPN
Power - Max
3.5W
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
4V
Max Collector Current
10A
DC Current Gain (hFE) (Min) @ Ic, Vce
20 @ 3A 4V
Current - Collector Cutoff (Max)
700μA
Vce Saturation (Max) @ Ib, Ic
4V @ 2.5A, 10A
Collector Emitter Breakdown Voltage
40V
Voltage - Collector Emitter Breakdown (Max)
40V
Current - Collector (Ic) (Max)
10A
RoHS Status
ROHS3 Compliant
TIP33-S Product Details
TIP33-S Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 20 @ 3A 4V.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 4V @ 2.5A, 10A.Product comes in the supplier's device package SOT-93.Single BJT transistor shows a 40V maximal voltage - Collector EmSingle BJT transistorter Breakdown.Maximum collector currents can be below 10A volts.
TIP33-S Features
the DC current gain for this device is 20 @ 3A 4V the vce saturation(Max) is 4V @ 2.5A, 10A the supplier device package of SOT-93
TIP33-S Applications
There are a lot of Bourns Inc. TIP33-S applications of single BJT transistors.