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TIP33-S

TIP33-S

TIP33-S

Bourns Inc.

TIP33-S datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Bourns Inc. stock available on our website

SOT-23

TIP33-S Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-218-3
Number of Pins 3
Supplier Device Package SOT-93
Operating Temperature -65°C~150°C TJ
Packaging Tube
Published 1993
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Power Dissipation 3.5W
Base Part Number TIP33
Polarity NPN
Power - Max 3.5W
Transistor Type NPN
Collector Emitter Voltage (VCEO) 4V
Max Collector Current 10A
DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 3A 4V
Current - Collector Cutoff (Max) 700μA
Vce Saturation (Max) @ Ib, Ic 4V @ 2.5A, 10A
Collector Emitter Breakdown Voltage 40V
Voltage - Collector Emitter Breakdown (Max) 40V
Current - Collector (Ic) (Max) 10A
RoHS Status ROHS3 Compliant
TIP33-S Product Details

TIP33-S Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 20 @ 3A 4V.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 4V @ 2.5A, 10A.Product comes in the supplier's device package SOT-93.Single BJT transistor shows a 40V maximal voltage - Collector EmSingle BJT transistorter Breakdown.Maximum collector currents can be below 10A volts.

TIP33-S Features


the DC current gain for this device is 20 @ 3A 4V
the vce saturation(Max) is 4V @ 2.5A, 10A
the supplier device package of SOT-93

TIP33-S Applications


There are a lot of Bourns Inc. TIP33-S applications of single BJT transistors.

  • Inverter
  • Muting
  • Driver
  • Interface

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