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BU900TP

BU900TP

BU900TP

STMicroelectronics

BU900TP datasheet pdf and Transistors - Bipolar (BJT) - Single product details from STMicroelectronics stock available on our website

SOT-23

BU900TP Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Through Hole
Mounting Type Through Hole
Package / Case SOT-82
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tube
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Subcategory Other Transistors
Max Power Dissipation 55W
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number BU900
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Polarity NPN
Power - Max 55W
Transistor Application SWITCHING
Transistor Type NPN - Trilinton, Zener Clamp
Collector Emitter Voltage (VCEO) 4V
Max Collector Current 5A
DC Current Gain (hFE) (Min) @ Ic, Vce 7000 @ 1A 5V
Current - Collector Cutoff (Max) 100μA
Vce Saturation (Max) @ Ib, Ic 4V @ 3mA, 3A
Collector Emitter Breakdown Voltage 370V
Emitter Base Voltage (VEBO) 13V
hFE Min 7000
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
BU900TP Product Details

BU900TP Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 7000 @ 1A 5V.When VCE saturation is 4V @ 3mA, 3A, transistor means Ic has reached transistors maximum value (saturated).The emitter base voltage can be kept at 13V for high efficiency.The maximum collector current is 5A volts.

BU900TP Features


the DC current gain for this device is 7000 @ 1A 5V
the vce saturation(Max) is 4V @ 3mA, 3A
the emitter base voltage is kept at 13V

BU900TP Applications


There are a lot of STMicroelectronics BU900TP applications of single BJT transistors.

  • Interface
  • Inverter
  • Muting
  • Driver

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