BU900TP datasheet pdf and Transistors - Bipolar (BJT) - Single product details from STMicroelectronics stock available on our website
SOT-23
BU900TP Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
SOT-82
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tube
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Subcategory
Other Transistors
Max Power Dissipation
55W
Terminal Position
SINGLE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
unknown
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Base Part Number
BU900
Pin Count
3
Qualification Status
Not Qualified
Number of Elements
1
Polarity
NPN
Power - Max
55W
Transistor Application
SWITCHING
Transistor Type
NPN - Trilinton, Zener Clamp
Collector Emitter Voltage (VCEO)
4V
Max Collector Current
5A
DC Current Gain (hFE) (Min) @ Ic, Vce
7000 @ 1A 5V
Current - Collector Cutoff (Max)
100μA
Vce Saturation (Max) @ Ib, Ic
4V @ 3mA, 3A
Collector Emitter Breakdown Voltage
370V
Emitter Base Voltage (VEBO)
13V
hFE Min
7000
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
BU900TP Product Details
BU900TP Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 7000 @ 1A 5V.When VCE saturation is 4V @ 3mA, 3A, transistor means Ic has reached transistors maximum value (saturated).The emitter base voltage can be kept at 13V for high efficiency.The maximum collector current is 5A volts.
BU900TP Features
the DC current gain for this device is 7000 @ 1A 5V the vce saturation(Max) is 4V @ 3mA, 3A the emitter base voltage is kept at 13V
BU900TP Applications
There are a lot of STMicroelectronics BU900TP applications of single BJT transistors.