TIP33A-S datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Bourns Inc. stock available on our website
SOT-23
TIP33A-S Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-218-3
Number of Pins
3
Supplier Device Package
SOT-93
Operating Temperature
-65°C~150°C TJ
Packaging
Tube
Published
1993
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
3.5W
Base Part Number
TIP33
Number of Elements
1
Polarity
NPN
Power Dissipation
80W
Power - Max
3.5W
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
60V
Max Collector Current
10A
DC Current Gain (hFE) (Min) @ Ic, Vce
20 @ 3A 4V
Current - Collector Cutoff (Max)
700μA
Vce Saturation (Max) @ Ib, Ic
4V @ 2.5A, 10A
Collector Emitter Breakdown Voltage
60V
Voltage - Collector Emitter Breakdown (Max)
60V
Current - Collector (Ic) (Max)
10A
Collector Base Voltage (VCBO)
100V
Emitter Base Voltage (VEBO)
5V
RoHS Status
ROHS3 Compliant
TIP33A-S Product Details
TIP33A-S Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 20 @ 3A 4V.A VCE saturation (Max) of 4V @ 2.5A, 10A means Ic has reached its maximum value(saturated).With the emitter base voltage set at 5V, an efficient operation can be achieved.The product comes in the supplier device package of SOT-93.Device displays Collector Emitter Breakdown (60V maximal voltage).Single BJT transistor is possible to have a collector current as low as 10A volts at Single BJT transistors maximum.
TIP33A-S Features
the DC current gain for this device is 20 @ 3A 4V the vce saturation(Max) is 4V @ 2.5A, 10A the emitter base voltage is kept at 5V the supplier device package of SOT-93
TIP33A-S Applications
There are a lot of Bourns Inc. TIP33A-S applications of single BJT transistors.