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MJD45H11RL

MJD45H11RL

MJD45H11RL

Rochester Electronics, LLC

MJD45H11RL datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website

SOT-23

MJD45H11RL Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Surface MountYES
Transistor Element Material SILICON
PackagingTape & Reel (TR)
JESD-609 Code e0
Pbfree Code yes
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Terminal Finish TIN LEAD
Terminal Position SINGLE
Terminal FormGULL WING
Peak Reflow Temperature (Cel) 240
[email protected] Reflow Temperature-Max (s) 30
Pin Count3
JESD-30 Code R-PSSO-G2
Qualification StatusCOMMERCIAL
Number of Elements 1
Configuration SINGLE
Case Connection COLLECTOR
Power - Max 20W
Transistor Application SWITCHING
Polarity/Channel Type PNP
Transistor Type PNP
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 2A 1V
Current - Collector Cutoff (Max) 1μA
Vce Saturation (Max) @ Ib, Ic 1V @ 400mA, 8A
Voltage - Collector Emitter Breakdown (Max) 80V
Current - Collector (Ic) (Max) 8A
Transition Frequency 90MHz
Frequency - Transition 90MHz
RoHS StatusNon-RoHS Compliant
In-Stock:2544 items

MJD45H11RL Product Details

MJD45H11RL Overview


DC current gain in this device equals 60 @ 2A 1V, which is the ratio of the base current to the collector current.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1V @ 400mA, 8A.90MHz is present in the transition frequency.Single BJT transistor shows a 80V maximal voltage - Collector EmSingle BJT transistorter Breakdown.

MJD45H11RL Features


the DC current gain for this device is 60 @ 2A 1V
the vce saturation(Max) is 1V @ 400mA, 8A
a transition frequency of 90MHz

MJD45H11RL Applications


There are a lot of Rochester Electronics, LLC MJD45H11RL applications of single BJT transistors.

  • Driver
  • Inverter
  • Interface
  • Muting

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