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TIP34-S

TIP34-S

TIP34-S

Bourns Inc.

TIP34-S datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Bourns Inc. stock available on our website

SOT-23

TIP34-S Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-218-3
Number of Pins 3
Supplier Device Package SOT-93
Operating Temperature-65°C~150°C TJ
PackagingTube
Published 1993
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Power Dissipation3.5W
Base Part Number TIP34
Polarity PNP
Power - Max 3.5W
Transistor Type PNP
Collector Emitter Voltage (VCEO) 4V
Max Collector Current 10A
DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 3A 4V
Current - Collector Cutoff (Max) 700μA
Vce Saturation (Max) @ Ib, Ic 4V @ 2.5A, 10A
Collector Emitter Breakdown Voltage40V
Voltage - Collector Emitter Breakdown (Max) 40V
Current - Collector (Ic) (Max) 10A
RoHS StatusROHS3 Compliant
In-Stock:4550 items

TIP34-S Product Details

TIP34-S Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 20 @ 3A 4V.A VCE saturation (Max) of 4V @ 2.5A, 10A means Ic has reached its maximum value(saturated).Supplier package SOT-93 contains the product.The device exhibits a collector-emitter breakdown at 40V.The maximum collector current is 10A volts.

TIP34-S Features


the DC current gain for this device is 20 @ 3A 4V
the vce saturation(Max) is 4V @ 2.5A, 10A
the supplier device package of SOT-93

TIP34-S Applications


There are a lot of Bourns Inc. TIP34-S applications of single BJT transistors.

  • Inverter
  • Driver
  • Interface
  • Muting

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