KSD261YBU Overview
This device has a DC current gain of 120 @ 100mA 1V, which is the ratio between the collector current and the base current.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 180mV, which allows maximum flexibilSingle BJT transistory in design.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 400mV @ 50mA, 500mA.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 500mA.There is no device package available from the supplier for this product.A 20V maximal voltage - Collector Emitter Breakdown is present in the device.The maximum collector current is 500mA volts.
KSD261YBU Features
the DC current gain for this device is 120 @ 100mA 1V
a collector emitter saturation voltage of 180mV
the vce saturation(Max) is 400mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is 500mA
the supplier device package of TO-92-3
KSD261YBU Applications
There are a lot of ON Semiconductor KSD261YBU applications of single BJT transistors.
- Muting
- Driver
- Interface
- Inverter
