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BD534KTU

BD534KTU

BD534KTU

ON Semiconductor

BD534KTU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

BD534KTU Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-220-3
Supplier Device Package TO-220-3
Operating Temperature 150°C TJ
Packaging Tube
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Base Part Number BD534
Power - Max 50W
Transistor Type PNP
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 2A 2V
Current - Collector Cutoff (Max) 100μA
Vce Saturation (Max) @ Ib, Ic 800mV @ 600mA, 6A
Voltage - Collector Emitter Breakdown (Max) 45V
Current - Collector (Ic) (Max) 8A
Frequency - Transition 12MHz
BD534KTU Product Details

BD534KTU Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 40 @ 2A 2V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 800mV @ 600mA, 6A.There is no device package available from the supplier for this product.Single BJT transistor shows a 45V maximal voltage - Collector EmSingle BJT transistorter Breakdown.

BD534KTU Features


the DC current gain for this device is 40 @ 2A 2V
the vce saturation(Max) is 800mV @ 600mA, 6A
the supplier device package of TO-220-3

BD534KTU Applications


There are a lot of ON Semiconductor BD534KTU applications of single BJT transistors.

  • Interface
  • Driver
  • Muting
  • Inverter

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