TIP36-S datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Bourns Inc. stock available on our website
SOT-23
TIP36-S Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-218-3
Number of Pins
3
Operating Temperature
-65°C~150°C TJ
Packaging
Tube
Published
1993
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Subcategory
Other Transistors
Max Power Dissipation
3.5W
Reach Compliance Code
unknown
Base Part Number
TIP36
Configuration
Single
Power - Max
3.5W
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
4V
Max Collector Current
25A
DC Current Gain (hFE) (Min) @ Ic, Vce
10 @ 15A 4V
Current - Collector Cutoff (Max)
1mA
Vce Saturation (Max) @ Ib, Ic
4V @ 5A, 25A
Collector Emitter Breakdown Voltage
40V
RoHS Status
ROHS3 Compliant
TIP36-S Product Details
TIP36-S Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 10 @ 15A 4V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 4V @ 5A, 25A.In extreme cases, the collector current can be as low as 25A volts.
TIP36-S Features
the DC current gain for this device is 10 @ 15A 4V the vce saturation(Max) is 4V @ 5A, 25A
TIP36-S Applications
There are a lot of Bourns Inc. TIP36-S applications of single BJT transistors.