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FJP13007H1

FJP13007H1

FJP13007H1

ON Semiconductor

FJP13007H1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

FJP13007H1 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-220-3
Surface Mount NO
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tube
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
HTS Code 8541.29.00.95
Subcategory Other Transistors
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code compliant
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number FJP13007
JESD-30 Code R-PSFM-T3
Number of Elements 1
Configuration SINGLE
Power - Max 80W
Transistor Application SWITCHING
Polarity/Channel Type NPN
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 15 @ 2A 5V
JEDEC-95 Code TO-220AB
Vce Saturation (Max) @ Ib, Ic 3V @ 2A, 8A
Voltage - Collector Emitter Breakdown (Max) 400V
Current - Collector (Ic) (Max) 8A
Transition Frequency 4MHz
Frequency - Transition 4MHz
Power Dissipation-Max (Abs) 80W
RoHS Status RoHS Compliant
FJP13007H1 Product Details

FJP13007H1 Overview


This device has a DC current gain of 15 @ 2A 5V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 3V @ 2A, 8A.In the part, the transition frequency is 4MHz.Device displays Collector Emitter Breakdown (400V maximal voltage).

FJP13007H1 Features


the DC current gain for this device is 15 @ 2A 5V
the vce saturation(Max) is 3V @ 2A, 8A
a transition frequency of 4MHz

FJP13007H1 Applications


There are a lot of ON Semiconductor FJP13007H1 applications of single BJT transistors.

  • Muting
  • Interface
  • Driver
  • Inverter

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