FJP13007H1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
FJP13007H1 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-220-3
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tube
JESD-609 Code
e3
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
HTS Code
8541.29.00.95
Subcategory
Other Transistors
Terminal Position
SINGLE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
compliant
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Base Part Number
FJP13007
JESD-30 Code
R-PSFM-T3
Number of Elements
1
Configuration
SINGLE
Power - Max
80W
Transistor Application
SWITCHING
Polarity/Channel Type
NPN
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
15 @ 2A 5V
JEDEC-95 Code
TO-220AB
Vce Saturation (Max) @ Ib, Ic
3V @ 2A, 8A
Voltage - Collector Emitter Breakdown (Max)
400V
Current - Collector (Ic) (Max)
8A
Transition Frequency
4MHz
Frequency - Transition
4MHz
Power Dissipation-Max (Abs)
80W
RoHS Status
RoHS Compliant
FJP13007H1 Product Details
FJP13007H1 Overview
This device has a DC current gain of 15 @ 2A 5V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 3V @ 2A, 8A.In the part, the transition frequency is 4MHz.Device displays Collector Emitter Breakdown (400V maximal voltage).
FJP13007H1 Features
the DC current gain for this device is 15 @ 2A 5V the vce saturation(Max) is 3V @ 2A, 8A a transition frequency of 4MHz
FJP13007H1 Applications
There are a lot of ON Semiconductor FJP13007H1 applications of single BJT transistors.