2N6517RLRP datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
2N6517RLRP Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Box (TB)
Published
2004
JESD-609 Code
e0
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin/Lead (Sn/Pb)
HTS Code
8541.21.00.95
Subcategory
Other Transistors
Voltage - Rated DC
350V
Max Power Dissipation
625mW
Terminal Position
BOTTOM
Peak Reflow Temperature (Cel)
240
Reach Compliance Code
not_compliant
Current Rating
500mA
[email protected] Reflow Temperature-Max (s)
30
Base Part Number
2N6517
Pin Count
3
JESD-30 Code
O-PBCY-T3
Qualification Status
Not Qualified
Number of Elements
1
Element Configuration
Single
Transistor Application
SWITCHING
Gain Bandwidth Product
200MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
1V
Max Collector Current
500mA
DC Current Gain (hFE) (Min) @ Ic, Vce
20 @ 50mA 10V
Current - Collector Cutoff (Max)
50nA ICBO
Vce Saturation (Max) @ Ib, Ic
1V @ 5mA, 50mA
Collector Emitter Breakdown Voltage
350V
Transition Frequency
40MHz
Collector Emitter Saturation Voltage
1V
Collector Base Voltage (VCBO)
350V
Emitter Base Voltage (VEBO)
6V
hFE Min
20
Turn Off Time-Max (toff)
3500ns
RoHS Status
Non-RoHS Compliant
Lead Free
Contains Lead
2N6517RLRP Product Details
2N6517RLRP Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 20 @ 50mA 10V.As it features a collector emitter saturation voltage of 1V, it allows for maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).With the emitter base voltage set at 6V, an efficient operation can be achieved.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 500mA.There is a transition frequency of 40MHz in the part.A maximum collector current of 500mA volts can be achieved.
2N6517RLRP Features
the DC current gain for this device is 20 @ 50mA 10V a collector emitter saturation voltage of 1V the vce saturation(Max) is 1V @ 5mA, 50mA the emitter base voltage is kept at 6V the current rating of this device is 500mA a transition frequency of 40MHz
2N6517RLRP Applications
There are a lot of ON Semiconductor 2N6517RLRP applications of single BJT transistors.