2N6517RLRP Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 20 @ 50mA 10V.As it features a collector emitter saturation voltage of 1V, it allows for maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).With the emitter base voltage set at 6V, an efficient operation can be achieved.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 500mA.There is a transition frequency of 40MHz in the part.A maximum collector current of 500mA volts can be achieved.
2N6517RLRP Features
the DC current gain for this device is 20 @ 50mA 10V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 5mA, 50mA
the emitter base voltage is kept at 6V
the current rating of this device is 500mA
a transition frequency of 40MHz
2N6517RLRP Applications
There are a lot of ON Semiconductor 2N6517RLRP applications of single BJT transistors.
- Inverter
- Driver
- Interface
- Muting