TIP36C-S datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Bourns Inc. stock available on our website
SOT-23
TIP36C-S Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-218-3
Number of Pins
3
Operating Temperature
-65°C~150°C TJ
Packaging
Tube
Published
1993
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Subcategory
Other Transistors
Max Power Dissipation
3.5W
Reach Compliance Code
unknown
Base Part Number
TIP36
Number of Elements
1
Configuration
Single
Power Dissipation
125W
Power - Max
3.5W
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
100V
Max Collector Current
25A
DC Current Gain (hFE) (Min) @ Ic, Vce
10 @ 15A 4V
Current - Collector Cutoff (Max)
1mA
Vce Saturation (Max) @ Ib, Ic
4V @ 5A, 25A
Collector Emitter Breakdown Voltage
100V
Collector Base Voltage (VCBO)
140V
Emitter Base Voltage (VEBO)
5V
RoHS Status
ROHS3 Compliant
TIP36C-S Product Details
TIP36C-S Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 10 @ 15A 4V.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.The emitter base voltage can be kept at 5V for high efficiency.Maximum collector currents can be below 25A volts.
TIP36C-S Features
the DC current gain for this device is 10 @ 15A 4V the vce saturation(Max) is 4V @ 5A, 25A the emitter base voltage is kept at 5V
TIP36C-S Applications
There are a lot of Bourns Inc. TIP36C-S applications of single BJT transistors.