TIP42A-S datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Bourns Inc. stock available on our website
SOT-23
TIP42A-S Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
18 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Number of Pins
3
Operating Temperature
-65°C~150°C TJ
Packaging
Tube
Published
1993
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Subcategory
Other Transistors
Max Power Dissipation
65W
Base Part Number
TIP42
Element Configuration
Single
Power - Max
2W
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
60V
Max Collector Current
6A
DC Current Gain (hFE) (Min) @ Ic, Vce
15 @ 3A 4V
Current - Collector Cutoff (Max)
700μA
Vce Saturation (Max) @ Ib, Ic
1.5V @ 600mA, 6A
Collector Emitter Breakdown Voltage
60V
Collector Emitter Saturation Voltage
1.5V
Collector Base Voltage (VCBO)
100V
Emitter Base Voltage (VEBO)
5V
Height
9.3mm
Length
10.4mm
Width
4.7mm
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
TIP42A-S Product Details
TIP42A-S Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 15 @ 3A 4V.With a collector emitter saturation voltage of 1.5V, it offers maximum design flexibility.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1.5V @ 600mA, 6A.The emitter base voltage can be kept at 5V for high efficiency.Single BJT transistor is possible to have a collector current as low as 6A volts at Single BJT transistors maximum.
TIP42A-S Features
the DC current gain for this device is 15 @ 3A 4V a collector emitter saturation voltage of 1.5V the vce saturation(Max) is 1.5V @ 600mA, 6A the emitter base voltage is kept at 5V
TIP42A-S Applications
There are a lot of Bourns Inc. TIP42A-S applications of single BJT transistors.