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KSH44H11TF

KSH44H11TF

KSH44H11TF

ON Semiconductor

KSH44H11TF datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

KSH44H11TF Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 6 Weeks
Lifecycle Status LAST SHIPMENTS (Last Updated: 2 weeks ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Weight 260.37mg
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2014
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Voltage - Rated DC 80V
Max Power Dissipation 1.75W
Terminal Form GULL WING
Current Rating 8A
Frequency 50MHz
Base Part Number KSH44H11
JESD-30 Code R-PSSO-G2
Number of Elements 1
Element Configuration Single
Power Dissipation 1.75W
Transistor Application SWITCHING
Gain Bandwidth Product 50MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 80V
Max Collector Current 8A
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 4A 1V
Current - Collector Cutoff (Max) 10μA
JEDEC-95 Code TO-252AA
Vce Saturation (Max) @ Ib, Ic 1V @ 400mA, 8A
Collector Emitter Breakdown Voltage 80V
Transition Frequency 50MHz
Collector Emitter Saturation Voltage 1V
Max Breakdown Voltage 80V
Collector Base Voltage (VCBO) 80V
Emitter Base Voltage (VEBO) 5V
hFE Min 60
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.378717 $0.378717
10 $0.357280 $3.5728
100 $0.337057 $33.7057
500 $0.317978 $158.989
1000 $0.299979 $299.979
KSH44H11TF Product Details

KSH44H11TF Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 40 @ 4A 1V.This system offers maximum design flexibility due to a collector emitter saturation voltage of 1V.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1V @ 400mA, 8A.Keeping the emitter base voltage at 5V can result in a high level of efficiency.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 8A.A transition frequency of 50MHz is present in the part.There is a breakdown input voltage of 80V volts that it can take.The maximum collector current is 8A volts.

KSH44H11TF Features


the DC current gain for this device is 40 @ 4A 1V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 400mA, 8A
the emitter base voltage is kept at 5V
the current rating of this device is 8A
a transition frequency of 50MHz

KSH44H11TF Applications


There are a lot of ON Semiconductor KSH44H11TF applications of single BJT transistors.

  • Inverter
  • Muting
  • Interface
  • Driver

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