KSE45H11TU Overview

As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 60 @ 2A 1V.A collector emitter saturation voltage of -1V allows maximum design flexibility.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1V @ 400mA, 8A.If the emitter base voltage is kept at -5V, a high level of efficiency can be achieved.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (-10A).In the part, the transition frequency is 40MHz.An input voltage of 80V volts is the breakdown voltage.In extreme cases, the collector current can be as low as 10A volts.

KSE45H11TU Features

the DC current gain for this device is 60 @ 2A 1V
a collector emitter saturation voltage of -1V
the vce saturation(Max) is 1V @ 400mA, 8A
the emitter base voltage is kept at -5V
the current rating of this device is -10A
a transition frequency of 40MHz

KSE45H11TU Applications

There are a lot of ON Semiconductor KSE45H11TU applications of single BJT transistors.

• Driver
• Muting
• Inverter
• Interface