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TIPL760-S

TIPL760-S

TIPL760-S

Bourns Inc.

TIPL760-S datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Bourns Inc. stock available on our website

SOT-23

TIPL760-S Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Operating Temperature -65°C~150°C TJ
Packaging Tube
Published 1993
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory Other Transistors
Max Power Dissipation 75W
Base Part Number TIPL760
Configuration Single
Power - Max 75W
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 2.5V
Max Collector Current 4A
DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 500mA 5V
Current - Collector Cutoff (Max) 50μA
Vce Saturation (Max) @ Ib, Ic 2.5V @ 800mA, 4A
Collector Emitter Breakdown Voltage 400V
Frequency - Transition 12MHz
Collector Base Voltage (VCBO) 850V
Radiation Hardening No
RoHS Status ROHS3 Compliant
TIPL760-S Product Details

TIPL760-S Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 20 @ 500mA 5V.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 2.5V @ 800mA, 4A.Single BJT transistor is possible to have a collector current as low as 4A volts at Single BJT transistors maximum.

TIPL760-S Features


the DC current gain for this device is 20 @ 500mA 5V
the vce saturation(Max) is 2.5V @ 800mA, 4A

TIPL760-S Applications


There are a lot of Bourns Inc. TIPL760-S applications of single BJT transistors.

  • Muting
  • Driver
  • Inverter
  • Interface

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