TIPL760-S datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Bourns Inc. stock available on our website
SOT-23
TIPL760-S Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Number of Pins
3
Operating Temperature
-65°C~150°C TJ
Packaging
Tube
Published
1993
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Subcategory
Other Transistors
Max Power Dissipation
75W
Base Part Number
TIPL760
Configuration
Single
Power - Max
75W
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
2.5V
Max Collector Current
4A
DC Current Gain (hFE) (Min) @ Ic, Vce
20 @ 500mA 5V
Current - Collector Cutoff (Max)
50μA
Vce Saturation (Max) @ Ib, Ic
2.5V @ 800mA, 4A
Collector Emitter Breakdown Voltage
400V
Frequency - Transition
12MHz
Collector Base Voltage (VCBO)
850V
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
TIPL760-S Product Details
TIPL760-S Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 20 @ 500mA 5V.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 2.5V @ 800mA, 4A.Single BJT transistor is possible to have a collector current as low as 4A volts at Single BJT transistors maximum.
TIPL760-S Features
the DC current gain for this device is 20 @ 500mA 5V the vce saturation(Max) is 2.5V @ 800mA, 4A
TIPL760-S Applications
There are a lot of Bourns Inc. TIPL760-S applications of single BJT transistors.