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TIPL760B-S

TIPL760B-S

TIPL760B-S

Bourns Inc.

TIPL760B-S datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Bourns Inc. stock available on our website

SOT-23

TIPL760B-S Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature-65°C~150°C TJ
PackagingTube
Published 1993
JESD-609 Code e1
Pbfree Code yes
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish TIN SILVER COPPER
Max Power Dissipation75W
Frequency 12MHz
Base Part Number TIPL760
Pin Count3
Number of Elements 1
Element ConfigurationSingle
Power Dissipation75W
Case Connection COLLECTOR
Transistor Application SWITCHING
Gain Bandwidth Product12MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 500V
Max Collector Current 4A
DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 500mA 5V
Current - Collector Cutoff (Max) 50μA
Vce Saturation (Max) @ Ib, Ic 1V @ 400mA, 2A
Collector Emitter Breakdown Voltage1.1kV
Voltage - Collector Emitter Breakdown (Max) 1100V
Transition Frequency 12MHz
Collector Base Voltage (VCBO) 1.1kV
Emitter Base Voltage (VEBO) 10V
hFE Min 20
Radiation HardeningNo
RoHS StatusROHS3 Compliant
In-Stock:4906 items

TIPL760B-S Product Details

TIPL760B-S Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 20 @ 500mA 5V DC current gain.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1V @ 400mA, 2A.If the emitter base voltage is kept at 10V, a high level of efficiency can be achieved.There is a transition frequency of 12MHz in the part.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.When collector current reaches its maximum, it can reach 4A volts.

TIPL760B-S Features


the DC current gain for this device is 20 @ 500mA 5V
the vce saturation(Max) is 1V @ 400mA, 2A
the emitter base voltage is kept at 10V
a transition frequency of 12MHz

TIPL760B-S Applications


There are a lot of Bourns Inc. TIPL760B-S applications of single BJT transistors.

  • Driver
  • Muting
  • Inverter
  • Interface

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