2N5551RLRM Overview

This device has a DC current gain of 80 @ 10mA 5V, which is the ratio between the base current and the collector current.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 250mV, which allows maximum flexibilSingle BJT transistory in design.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 200mV @ 5mA, 50mA.The emitter base voltage can be kept at 6V for high efficiency.Its current rating is 600mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.There is a transition frequency of 100MHz in the part.A maximum collector current of 600mA volts can be achieved.

2N5551RLRM Features

the DC current gain for this device is 80 @ 10mA 5V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 200mV @ 5mA, 50mA
the emitter base voltage is kept at 6V
the current rating of this device is 600mA
a transition frequency of 100MHz

2N5551RLRM Applications

There are a lot of ON Semiconductor 2N5551RLRM applications of single BJT transistors.

• Interface
• Inverter
• Muting
• Driver