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JANTXV2N2218A

JANTXV2N2218A

JANTXV2N2218A

Microsemi Corporation

JANTXV2N2218A datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website

SOT-23

JANTXV2N2218A Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 23 Weeks
Lifecycle Status IN PRODUCTION (Last Updated: 1 month ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-205AD, TO-39-3 Metal Can
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~200°C TJ
Packaging Bulk
Published 2007
Series Military, MIL-PRF-19500/251
JESD-609 Code e0
Pbfree Code no
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
Subcategory Other Transistors
Max Power Dissipation 800mW
Terminal Position BOTTOM
Terminal Form WIRE
Pin Count 2
Qualification Status Qualified
Number of Elements 1
Configuration SINGLE
Power Dissipation 800mW
Case Connection COLLECTOR
Transistor Application SWITCHING
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 50V
Max Collector Current 800mA
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 150mA 10V
Current - Collector Cutoff (Max) 10nA
JEDEC-95 Code TO-5
Vce Saturation (Max) @ Ib, Ic 1V @ 50mA, 500mA
Transition Frequency 250MHz
Collector Base Voltage (VCBO) 75V
Emitter Base Voltage (VEBO) 6V
Radiation Hardening No
RoHS Status Non-RoHS Compliant
JANTXV2N2218A Product Details

JANTXV2N2218A Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 40 @ 150mA 10V.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 1V @ 50mA, 500mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 6V.In this part, there is a transition frequency of 250MHz.When collector current reaches its maximum, it can reach 800mA volts.

JANTXV2N2218A Features


the DC current gain for this device is 40 @ 150mA 10V
the vce saturation(Max) is 1V @ 50mA, 500mA
the emitter base voltage is kept at 6V
a transition frequency of 250MHz

JANTXV2N2218A Applications


There are a lot of Microsemi Corporation JANTXV2N2218A applications of single BJT transistors.

  • Driver
  • Inverter
  • Muting
  • Interface

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