TIPL761C-S datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Bourns Inc. stock available on our website
SOT-23
TIPL761C-S Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-218-3
Number of Pins
3
Supplier Device Package
SOT-93
Packaging
Tube
Published
2012
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Max Power Dissipation
100W
Base Part Number
TIPL761
Polarity
NPN
Power - Max
100W
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
1V
Max Collector Current
4A
DC Current Gain (hFE) (Min) @ Ic, Vce
20 @ 500mA 5V
Current - Collector Cutoff (Max)
50μA
Vce Saturation (Max) @ Ib, Ic
1V @ 400mA, 2A
Collector Emitter Breakdown Voltage
550V
Voltage - Collector Emitter Breakdown (Max)
550V
Current - Collector (Ic) (Max)
4A
Frequency - Transition
12MHz
RoHS Status
ROHS3 Compliant
TIPL761C-S Product Details
TIPL761C-S Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 20 @ 500mA 5V DC current gain.When VCE saturation is 1V @ 400mA, 2A, transistor means Ic has reached transistors maximum value (saturated).The product comes in the supplier device package of SOT-93.Device displays Collector Emitter Breakdown (550V maximal voltage).Single BJT transistor is possible for the collector current to fall as low as 4A volts at Single BJT transistors maximum.
TIPL761C-S Features
the DC current gain for this device is 20 @ 500mA 5V the vce saturation(Max) is 1V @ 400mA, 2A the supplier device package of SOT-93
TIPL761C-S Applications
There are a lot of Bourns Inc. TIPL761C-S applications of single BJT transistors.