BD238STU Overview
This device has a DC current gain of 25 @ 1A 2V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of -600mV.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 600mV @ 100mA, 1A.A high level of efficiency can be achieved if the base voltage of the emitter remains at -5V.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -2A for this device.A transition frequency of 3MHz is present in the part.Single BJT transistor can take a breakdown input voltage of 100V volts.Collector current can be as low as 2A volts at its maximum.
BD238STU Features
the DC current gain for this device is 25 @ 1A 2V
a collector emitter saturation voltage of -600mV
the vce saturation(Max) is 600mV @ 100mA, 1A
the emitter base voltage is kept at -5V
the current rating of this device is -2A
a transition frequency of 3MHz
BD238STU Applications
There are a lot of ON Semiconductor BD238STU applications of single BJT transistors.
- Driver
- Inverter
- Muting
- Interface
