BD238STU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
BD238STU Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
6 Weeks
Lifecycle Status
LIFETIME (Last Updated: 1 week ago)
Contact Plating
Tin
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-225AA, TO-126-3
Number of Pins
3
Weight
761mg
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tube
Published
2000
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Subcategory
Other Transistors
Voltage - Rated DC
-80V
Max Power Dissipation
25W
Current Rating
-2A
Frequency
3MHz
Base Part Number
BD238
Number of Elements
1
Element Configuration
Single
Power Dissipation
25W
Transistor Application
SWITCHING
Gain Bandwidth Product
3MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
80V
Max Collector Current
2A
DC Current Gain (hFE) (Min) @ Ic, Vce
25 @ 1A 2V
Current - Collector Cutoff (Max)
100μA ICBO
Vce Saturation (Max) @ Ib, Ic
600mV @ 100mA, 1A
Collector Emitter Breakdown Voltage
80V
Transition Frequency
3MHz
Collector Emitter Saturation Voltage
-600mV
Max Breakdown Voltage
100V
Collector Base Voltage (VCBO)
-100V
Emitter Base Voltage (VEBO)
-5V
hFE Min
25
Height
11mm
Length
8mm
Width
3.25mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$3.025600
$3.0256
10
$2.854340
$28.5434
100
$2.692773
$269.2773
500
$2.540352
$1270.176
1000
$2.396559
$2396.559
BD238STU Product Details
BD238STU Overview
This device has a DC current gain of 25 @ 1A 2V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of -600mV.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 600mV @ 100mA, 1A.A high level of efficiency can be achieved if the base voltage of the emitter remains at -5V.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -2A for this device.A transition frequency of 3MHz is present in the part.Single BJT transistor can take a breakdown input voltage of 100V volts.Collector current can be as low as 2A volts at its maximum.
BD238STU Features
the DC current gain for this device is 25 @ 1A 2V a collector emitter saturation voltage of -600mV the vce saturation(Max) is 600mV @ 100mA, 1A the emitter base voltage is kept at -5V the current rating of this device is -2A a transition frequency of 3MHz
BD238STU Applications
There are a lot of ON Semiconductor BD238STU applications of single BJT transistors.