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BD238STU

BD238STU

BD238STU

ON Semiconductor

BD238STU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

BD238STU Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 6 Weeks
Lifecycle Status LIFETIME (Last Updated: 1 week ago)
Contact Plating Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-225AA, TO-126-3
Number of Pins 3
Weight 761mg
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tube
Published 2000
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory Other Transistors
Voltage - Rated DC -80V
Max Power Dissipation 25W
Current Rating -2A
Frequency 3MHz
Base Part Number BD238
Number of Elements 1
Element Configuration Single
Power Dissipation 25W
Transistor Application SWITCHING
Gain Bandwidth Product 3MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 80V
Max Collector Current 2A
DC Current Gain (hFE) (Min) @ Ic, Vce 25 @ 1A 2V
Current - Collector Cutoff (Max) 100μA ICBO
Vce Saturation (Max) @ Ib, Ic 600mV @ 100mA, 1A
Collector Emitter Breakdown Voltage 80V
Transition Frequency 3MHz
Collector Emitter Saturation Voltage -600mV
Max Breakdown Voltage 100V
Collector Base Voltage (VCBO) -100V
Emitter Base Voltage (VEBO) -5V
hFE Min 25
Height 11mm
Length 8mm
Width 3.25mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $3.025600 $3.0256
10 $2.854340 $28.5434
100 $2.692773 $269.2773
500 $2.540352 $1270.176
1000 $2.396559 $2396.559
BD238STU Product Details

BD238STU Overview


This device has a DC current gain of 25 @ 1A 2V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of -600mV.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 600mV @ 100mA, 1A.A high level of efficiency can be achieved if the base voltage of the emitter remains at -5V.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -2A for this device.A transition frequency of 3MHz is present in the part.Single BJT transistor can take a breakdown input voltage of 100V volts.Collector current can be as low as 2A volts at its maximum.

BD238STU Features


the DC current gain for this device is 25 @ 1A 2V
a collector emitter saturation voltage of -600mV
the vce saturation(Max) is 600mV @ 100mA, 1A
the emitter base voltage is kept at -5V
the current rating of this device is -2A
a transition frequency of 3MHz

BD238STU Applications


There are a lot of ON Semiconductor BD238STU applications of single BJT transistors.

  • Driver
  • Inverter
  • Muting
  • Interface

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