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TIPL770-S

TIPL770-S

TIPL770-S

Bourns Inc.

TIPL770-S datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Bourns Inc. stock available on our website

SOT-23

TIPL770-S Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Operating Temperature -65°C~150°C TJ
Packaging Tube
Published 1993
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory Other Transistors
Max Power Dissipation 50W
Frequency 12MHz
Number of Elements 1
Element Configuration Single
Power Dissipation 50W
Gain Bandwidth Product 12MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 400V
Max Collector Current 2.5A
DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 500mA 5V
Current - Collector Cutoff (Max) 5μA
Vce Saturation (Max) @ Ib, Ic 2.5V @ 500mA, 2.5A
Collector Emitter Breakdown Voltage 400V
Collector Base Voltage (VCBO) 850V
Emitter Base Voltage (VEBO) 10V
hFE Min 20
Radiation Hardening No
RoHS Status ROHS3 Compliant
TIPL770-S Product Details

TIPL770-S Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 20 @ 500mA 5V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 2.5V @ 500mA, 2.5A.An emitter's base voltage can be kept at 10V to gain high efficiency.Single BJT transistor is possible to have a collector current as low as 2.5A volts at Single BJT transistors maximum.

TIPL770-S Features


the DC current gain for this device is 20 @ 500mA 5V
the vce saturation(Max) is 2.5V @ 500mA, 2.5A
the emitter base voltage is kept at 10V

TIPL770-S Applications


There are a lot of Bourns Inc. TIPL770-S applications of single BJT transistors.

  • Inverter
  • Driver
  • Interface
  • Muting

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