TIPL770-S datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Bourns Inc. stock available on our website
SOT-23
TIPL770-S Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Number of Pins
3
Operating Temperature
-65°C~150°C TJ
Packaging
Tube
Published
1993
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Subcategory
Other Transistors
Max Power Dissipation
50W
Frequency
12MHz
Number of Elements
1
Element Configuration
Single
Power Dissipation
50W
Gain Bandwidth Product
12MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
400V
Max Collector Current
2.5A
DC Current Gain (hFE) (Min) @ Ic, Vce
20 @ 500mA 5V
Current - Collector Cutoff (Max)
5μA
Vce Saturation (Max) @ Ib, Ic
2.5V @ 500mA, 2.5A
Collector Emitter Breakdown Voltage
400V
Collector Base Voltage (VCBO)
850V
Emitter Base Voltage (VEBO)
10V
hFE Min
20
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
TIPL770-S Product Details
TIPL770-S Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 20 @ 500mA 5V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 2.5V @ 500mA, 2.5A.An emitter's base voltage can be kept at 10V to gain high efficiency.Single BJT transistor is possible to have a collector current as low as 2.5A volts at Single BJT transistors maximum.
TIPL770-S Features
the DC current gain for this device is 20 @ 500mA 5V the vce saturation(Max) is 2.5V @ 500mA, 2.5A the emitter base voltage is kept at 10V
TIPL770-S Applications
There are a lot of Bourns Inc. TIPL770-S applications of single BJT transistors.