TIPL762-S datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Bourns Inc. stock available on our website
SOT-23
TIPL762-S Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-218-3
Number of Pins
3
Supplier Device Package
SOT-93
Operating Temperature
-65°C~150°C TJ
Packaging
Tube
Published
1993
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
120W
Frequency
6MHz
Base Part Number
TIPL762
Number of Elements
1
Polarity
NPN
Element Configuration
Single
Power Dissipation
120W
Power - Max
120W
Gain Bandwidth Product
6MHz
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
400V
Max Collector Current
6A
DC Current Gain (hFE) (Min) @ Ic, Vce
20 @ 500mA 5V
Current - Collector Cutoff (Max)
50μA
Vce Saturation (Max) @ Ib, Ic
2.5V @ 1.2A, 6A
Collector Emitter Breakdown Voltage
400V
Voltage - Collector Emitter Breakdown (Max)
400V
Current - Collector (Ic) (Max)
6A
Frequency - Transition
6MHz
Collector Base Voltage (VCBO)
850V
Emitter Base Voltage (VEBO)
10V
hFE Min
20
RoHS Status
ROHS3 Compliant
TIPL762-S Product Details
TIPL762-S Overview
DC current gain in this device equals 20 @ 500mA 5V, which is the ratio of the base current to the collector current.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 2.5V @ 1.2A, 6A.Keeping the emitter base voltage at 10V allows for a high level of efficiency.SOT-93 is the supplier device package for this product.The device exhibits a collector-emitter breakdown at 400V.When collector current reaches its maximum, it can reach 6A volts.
TIPL762-S Features
the DC current gain for this device is 20 @ 500mA 5V the vce saturation(Max) is 2.5V @ 1.2A, 6A the emitter base voltage is kept at 10V the supplier device package of SOT-93
TIPL762-S Applications
There are a lot of Bourns Inc. TIPL762-S applications of single BJT transistors.