BC639RL1G Overview

The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 40 @ 150mA 2V.This system offers maximum design flexibility due to a collector emitter saturation voltage of 500mV.When VCE saturation is 500mV @ 50mA, 500mA, transistor means Ic has reached transistors maximum value (saturated).With the emitter base voltage set at 5V, an efficient operation can be achieved.The current rating of this fuse is 1A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.200MHz is present in the transition frequency.Single BJT transistor can take a breakdown input voltage of 80V volts.In extreme cases, the collector current can be as low as 1A volts.

BC639RL1G Features

the DC current gain for this device is 40 @ 150mA 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is 1A
a transition frequency of 200MHz

BC639RL1G Applications

There are a lot of ON Semiconductor BC639RL1G applications of single BJT transistors.

• Muting
• Driver
• Inverter
• Interface