BD681STU Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 750 @ 1.5A 3V.This design offers maximum flexibility with a collector emitter saturation voltage of 2.5V.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 2.5V @ 30mA, 1.5A.Continuous collector voltages should be kept at 4A to achieve high efficiency.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 4A current rating.10MHz is present in the transition frequency.A maximum collector current of 4A volts can be achieved.
BD681STU Features
the DC current gain for this device is 750 @ 1.5A 3V
a collector emitter saturation voltage of 2.5V
the vce saturation(Max) is 2.5V @ 30mA, 1.5A
the emitter base voltage is kept at 5V
the current rating of this device is 4A
a transition frequency of 10MHz
BD681STU Applications
There are a lot of ON Semiconductor BD681STU applications of single BJT transistors.
- Inverter
- Driver
- Muting
- Interface
