TIPL762A-S datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Bourns Inc. stock available on our website
SOT-23
TIPL762A-S Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-218-3
Number of Pins
3
Supplier Device Package
SOT-93
Operating Temperature
-65°C~150°C TJ
Packaging
Tube
Published
1993
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
120W
Frequency
6MHz
Base Part Number
TIPL762
Number of Elements
1
Polarity
NPN
Power Dissipation
120W
Power - Max
120W
Transistor Type
NPN - Darlington
Collector Emitter Voltage (VCEO)
450V
Max Collector Current
6A
DC Current Gain (hFE) (Min) @ Ic, Vce
60 @ 500mA 5V
Current - Collector Cutoff (Max)
50μA
Vce Saturation (Max) @ Ib, Ic
2.5V @ 1.2A, 6A
Collector Emitter Breakdown Voltage
450V
Voltage - Collector Emitter Breakdown (Max)
450V
Current - Collector (Ic) (Max)
6A
Collector Base Voltage (VCBO)
1kV
Emitter Base Voltage (VEBO)
10V
RoHS Status
ROHS3 Compliant
TIPL762A-S Product Details
TIPL762A-S Overview
This device has a DC current gain of 60 @ 500mA 5V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).With the emitter base voltage set at 10V, an efficient operation can be achieved.This product comes in a SOT-93 device package from the supplier.The device exhibits a collector-emitter breakdown at 450V.Single BJT transistor is possible for the collector current to fall as low as 6A volts at Single BJT transistors maximum.
TIPL762A-S Features
the DC current gain for this device is 60 @ 500mA 5V the vce saturation(Max) is 2.5V @ 1.2A, 6A the emitter base voltage is kept at 10V the supplier device package of SOT-93
TIPL762A-S Applications
There are a lot of Bourns Inc. TIPL762A-S applications of single BJT transistors.