BC546CBU Overview
DC current gain in this device equals 420 @ 2mA 5V, which is the ratio of the base current to the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 200mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 600mV @ 5mA, 100mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 6V.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (100mA).In extreme cases, the collector current can be as low as 100mA volts.
BC546CBU Features
the DC current gain for this device is 420 @ 2mA 5V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
the current rating of this device is 100mA
BC546CBU Applications
There are a lot of ON Semiconductor BC546CBU applications of single BJT transistors.
- Inverter
- Driver
- Interface
- Muting