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MJE200

MJE200

MJE200

Rochester Electronics, LLC

MJE200 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website

SOT-23

MJE200 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Through Hole
Package / Case TO-225AA, TO-126-3
Surface MountNO
Transistor Element Material SILICON
PackagingBulk
JESD-609 Code e0
Pbfree Code no
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish TIN LEAD
Terminal Position SINGLE
Peak Reflow Temperature (Cel) 240
[email protected] Reflow Temperature-Max (s) 30
Pin Count3
JESD-30 Code R-PSFM-T3
Qualification StatusCOMMERCIAL
Number of Elements 1
Configuration SINGLE
Power - Max 15W
Transistor Application AMPLIFIER
Polarity/Channel Type NPN
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 45 @ 2A 1V
Vce Saturation (Max) @ Ib, Ic 1.8V @ 1A, 5A
Voltage - Collector Emitter Breakdown (Max) 40V
Current - Collector (Ic) (Max) 5A
Transition Frequency 65MHz
Frequency - Transition 65MHz
RoHS StatusNon-RoHS Compliant
In-Stock:2481 items

MJE200 Product Details

MJE200 Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 45 @ 2A 1V.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1.8V @ 1A, 5A.As a result, the part has a transition frequency of 65MHz.Single BJT transistor shows a 40V maximal voltage - Collector EmSingle BJT transistorter Breakdown.

MJE200 Features


the DC current gain for this device is 45 @ 2A 1V
the vce saturation(Max) is 1.8V @ 1A, 5A
a transition frequency of 65MHz

MJE200 Applications


There are a lot of Rochester Electronics, LLC MJE200 applications of single BJT transistors.

  • Inverter
  • Muting
  • Driver
  • Interface

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