MJE200 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website
SOT-23
MJE200 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-225AA, TO-126-3
Surface Mount
NO
Transistor Element Material
SILICON
Packaging
Bulk
JESD-609 Code
e0
Pbfree Code
no
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Terminal Finish
TIN LEAD
Terminal Position
SINGLE
Peak Reflow Temperature (Cel)
240
[email protected] Reflow Temperature-Max (s)
30
Pin Count
3
JESD-30 Code
R-PSFM-T3
Qualification Status
COMMERCIAL
Number of Elements
1
Configuration
SINGLE
Power - Max
15W
Transistor Application
AMPLIFIER
Polarity/Channel Type
NPN
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
45 @ 2A 1V
Vce Saturation (Max) @ Ib, Ic
1.8V @ 1A, 5A
Voltage - Collector Emitter Breakdown (Max)
40V
Current - Collector (Ic) (Max)
5A
Transition Frequency
65MHz
Frequency - Transition
65MHz
RoHS Status
Non-RoHS Compliant
MJE200 Product Details
MJE200 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 45 @ 2A 1V.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1.8V @ 1A, 5A.As a result, the part has a transition frequency of 65MHz.Single BJT transistor shows a 40V maximal voltage - Collector EmSingle BJT transistorter Breakdown.
MJE200 Features
the DC current gain for this device is 45 @ 2A 1V the vce saturation(Max) is 1.8V @ 1A, 5A a transition frequency of 65MHz
MJE200 Applications
There are a lot of Rochester Electronics, LLC MJE200 applications of single BJT transistors.