TIPL791A-S datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Bourns Inc. stock available on our website
SOT-23
TIPL791A-S Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-65°C~150°C TJ
Packaging
Tube
Published
1993
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Max Power Dissipation
75W
Terminal Position
SINGLE
Base Part Number
TIPL791
Pin Count
3
Number of Elements
1
Polarity
NPN
Configuration
SINGLE
Case Connection
COLLECTOR
Power - Max
75W
Transistor Application
SWITCHING
Transistor Type
NPN - Darlington
Collector Emitter Voltage (VCEO)
2.5V
Max Collector Current
4A
DC Current Gain (hFE) (Min) @ Ic, Vce
60 @ 500mA 5V
Current - Collector Cutoff (Max)
5μA
JEDEC-95 Code
TO-220AB
Vce Saturation (Max) @ Ib, Ic
2.5V @ 1A, 4A
Collector Emitter Breakdown Voltage
450V
Transition Frequency
12MHz
Collector Base Voltage (VCBO)
1kV
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
TIPL791A-S Product Details
TIPL791A-S Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 60 @ 500mA 5V.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Single BJT transistor contains a transSingle BJT transistorion frequency of 12MHz.A maximum collector current of 4A volts is possible.
TIPL791A-S Features
the DC current gain for this device is 60 @ 500mA 5V the vce saturation(Max) is 2.5V @ 1A, 4A a transition frequency of 12MHz
TIPL791A-S Applications
There are a lot of Bourns Inc. TIPL791A-S applications of single BJT transistors.