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TIPL791A-S

TIPL791A-S

TIPL791A-S

Bourns Inc.

TIPL791A-S datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Bourns Inc. stock available on our website

SOT-23

TIPL791A-S Datasheet

non-compliant

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Specifications
Name Value
Type Parameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -65°C~150°C TJ
Packaging Tube
Published 1993
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Max Power Dissipation 75W
Terminal Position SINGLE
Base Part Number TIPL791
Pin Count 3
Number of Elements 1
Polarity NPN
Configuration SINGLE
Case Connection COLLECTOR
Power - Max 75W
Transistor Application SWITCHING
Transistor Type NPN - Darlington
Collector Emitter Voltage (VCEO) 2.5V
Max Collector Current 4A
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 500mA 5V
Current - Collector Cutoff (Max) 5μA
JEDEC-95 Code TO-220AB
Vce Saturation (Max) @ Ib, Ic 2.5V @ 1A, 4A
Collector Emitter Breakdown Voltage 450V
Transition Frequency 12MHz
Collector Base Voltage (VCBO) 1kV
Radiation Hardening No
RoHS Status ROHS3 Compliant
TIPL791A-S Product Details

TIPL791A-S Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 60 @ 500mA 5V.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Single BJT transistor contains a transSingle BJT transistorion frequency of 12MHz.A maximum collector current of 4A volts is possible.

TIPL791A-S Features


the DC current gain for this device is 60 @ 500mA 5V
the vce saturation(Max) is 2.5V @ 1A, 4A
a transition frequency of 12MHz

TIPL791A-S Applications


There are a lot of Bourns Inc. TIPL791A-S applications of single BJT transistors.

  • Driver
  • Interface
  • Muting
  • Inverter

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