DSA7U01R0L datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Panasonic Electronic Components stock available on our website
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DSA7U01R0L Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
10 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-243AA
Number of Pins
3
Supplier Device Package
MiniP3-F2-B
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Part Status
Discontinued
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Max Operating Temperature
150°C
Max Power Dissipation
1W
Base Part Number
DSA7U01
Polarity
PNP
Element Configuration
Single
Power - Max
1W
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
600mV
Max Collector Current
500mA
DC Current Gain (hFE) (Min) @ Ic, Vce
130 @ 150mA 10V
Vce Saturation (Max) @ Ib, Ic
600mV @ 50mA, 500mA
Collector Emitter Breakdown Voltage
100V
Voltage - Collector Emitter Breakdown (Max)
100V
Current - Collector (Ic) (Max)
500mA
Max Frequency
120MHz
Collector Emitter Saturation Voltage
-600mV
Max Breakdown Voltage
100V
Frequency - Transition
120MHz
Collector Base Voltage (VCBO)
-100V
Emitter Base Voltage (VEBO)
-5V
hFE Min
90
Continuous Collector Current
-500mA
Height
1.5mm
Length
4.5mm
Width
2.5mm
RoHS Status
RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
DSA7U01R0L Product Details
DSA7U01R0L Overview
In this device, the DC current gain is 130 @ 150mA 10V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.The collector emitter saturation voltage is -600mV, which allows for maximum design flexibility.When VCE saturation is 600mV @ 50mA, 500mA, transistor means Ic has reached transistors maximum value (saturated).Single BJT transistor is recommended to keep the continuous collector voltage at -500mA in order to achieve high efficiency.If the emitter base voltage is kept at -5V, a high level of efficiency can be achieved.This device can take an input voltage of 100V volts before it breaks down.Product package MiniP3-F2-B comes from the supplier.The device exhibits a collector-emitter breakdown at 100V.Single BJT transistor is possible for the collector current to fall as low as 500mA volts at Single BJT transistors maximum.
DSA7U01R0L Features
the DC current gain for this device is 130 @ 150mA 10V a collector emitter saturation voltage of -600mV the vce saturation(Max) is 600mV @ 50mA, 500mA the emitter base voltage is kept at -5V the supplier device package of MiniP3-F2-B
DSA7U01R0L Applications
There are a lot of Panasonic Electronic Components DSA7U01R0L applications of single BJT transistors.