DSA7U01R0L Overview
In this device, the DC current gain is 130 @ 150mA 10V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.The collector emitter saturation voltage is -600mV, which allows for maximum design flexibility.When VCE saturation is 600mV @ 50mA, 500mA, transistor means Ic has reached transistors maximum value (saturated).Single BJT transistor is recommended to keep the continuous collector voltage at -500mA in order to achieve high efficiency.If the emitter base voltage is kept at -5V, a high level of efficiency can be achieved.This device can take an input voltage of 100V volts before it breaks down.Product package MiniP3-F2-B comes from the supplier.The device exhibits a collector-emitter breakdown at 100V.Single BJT transistor is possible for the collector current to fall as low as 500mA volts at Single BJT transistors maximum.
DSA7U01R0L Features
the DC current gain for this device is 130 @ 150mA 10V
a collector emitter saturation voltage of -600mV
the vce saturation(Max) is 600mV @ 50mA, 500mA
the emitter base voltage is kept at -5V
the supplier device package of MiniP3-F2-B
DSA7U01R0L Applications
There are a lot of Panasonic Electronic Components DSA7U01R0L applications of single BJT transistors.
- Driver
- Muting
- Interface
- Inverter
