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DCP52-13

DCP52-13

DCP52-13

Diodes Incorporated

DCP52-13 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website

SOT-23

DCP52-13 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 14 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Number of Pins 4
Weight 7.994566mg
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingCut Tape (CT)
Published 2011
JESD-609 Code e3
Pbfree Code yes
Part StatusDiscontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory Other Transistors
Max Power Dissipation2W
Terminal Position DUAL
Terminal FormGULL WING
Peak Reflow Temperature (Cel) 260
Frequency 200MHz
[email protected] Reflow Temperature-Max (s) 40
Base Part Number DCP52
Pin Count4
Number of Elements 1
Element ConfigurationSingle
Power Dissipation2W
Case Connection COLLECTOR
Power - Max 1W
Transistor Application SWITCHING
Gain Bandwidth Product200MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 60V
Max Collector Current 1A
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 150mA 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA
Collector Emitter Breakdown Voltage60V
Transition Frequency 200MHz
Collector Emitter Saturation Voltage-500mV
Max Breakdown Voltage 60V
Collector Base Voltage (VCBO) 60V
Emitter Base Voltage (VEBO) -5V
hFE Min 25
Continuous Collector Current -1A
Height 1.65mm
Length 6.7mm
Width 3.7mm
Radiation HardeningNo
RoHS StatusROHS3 Compliant
In-Stock:4701 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.43000$0.43
10$0.36500$3.65
100$0.27250$27.25
500$0.21414$107.07

DCP52-13 Product Details

DCP52-13 Overview


This device has a DC current gain of 40 @ 150mA 2V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of -500mV allows maximum design flexibility.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 500mV @ 50mA, 500mA.A constant collector voltage of -1A is necessary for high efficiency.With the emitter base voltage set at -5V, an efficient operation can be achieved.Parts of this part have transition frequencies of 200MHz.Breakdown input voltage is 60V volts.In extreme cases, the collector current can be as low as 1A volts.

DCP52-13 Features


the DC current gain for this device is 40 @ 150mA 2V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at -5V
a transition frequency of 200MHz

DCP52-13 Applications


There are a lot of Diodes Incorporated DCP52-13 applications of single BJT transistors.

  • Interface
  • Inverter
  • Driver
  • Muting

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