NE3512S02-T1C-A

new-10%

Manufacturer part number:NE3512S02-T1C-A

Manufacturer:CEL

Description:RF JFET Transistors SUPER Lo Noise PseudomorpHIc HJ FET

Case Package:SOT-23

Datasheet:NE3512S02-T1C-A Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Package / Case	4-SMD, Flat Leads
Number of Pins	4
Packaging	Tape & Reel (TR)
JESD-609 Code	e6
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	4
ECCN Code	EAR99
Terminal Finish	Tin/Bismuth (Sn/Bi)
Max Operating Temperature	125°C
Min Operating Temperature	-65°C
Max Power Dissipation	165mW
Terminal Position	QUAD
Peak Reflow Temperature (Cel)	260
Current Rating	70mA
Frequency	12GHz
[email protected] Reflow Temperature-Max (s)	10
Base Part Number	NE3512
Pin Count	4
Number of Elements	1
Configuration	SINGLE
Operating Mode	DEPLETION MODE
Output Power	165mW
Current - Test	10mA
Transistor Application	AMPLIFIER
Drain to Source Voltage (Vdss)	4V
Polarity/Channel Type	N-CHANNEL
Transistor Type	HFET
Continuous Drain Current (ID)	70mA
Gate to Source Voltage (Vgs)	-3V
Gain	13.5dB
Drain Current-Max (Abs) (ID)	0.015A
FET Technology	HETERO-JUNCTION
Noise Figure	0.35dB
Voltage - Test	2V
Min Breakdown Voltage	3V
Radiation Hardening	No
RoHS Status	RoHS Compliant
Lead Free	Lead Free