2N2270 Overview

This design offers maximum flexibility with a collector emitter saturation voltage of 900mV.A high level of efficiency can be achieved if the base voltage of the emitter remains at 7V.As you can see, the part has a transition frequency of 100MHz.A maximum collector current of 1A volts is possible.

2N2270 Features

a collector emitter saturation voltage of 900mV
the emitter base voltage is kept at 7V
a transition frequency of 100MHz

2N2270 Applications

There are a lot of Central Semiconductor
2N2270 applications of single BJT transistors.

• Inverter
• Interface
• Driver
• Muting