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D44VH10G

D44VH10G

D44VH10G

ON Semiconductor

D44VH10G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

D44VH10G Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 9 Weeks
Lifecycle Status ACTIVE (Last Updated: 13 hours ago)
Contact Plating Tin
Mounting Type Through Hole
Package / Case TO-220-3
Surface Mount NO
Number of Pins 3
Weight 4.535924g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2005
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory Other Transistors
Voltage - Rated DC 80V
Max Power Dissipation 83W
Peak Reflow Temperature (Cel) 260
Current Rating 15A
Frequency 50MHz
[email protected] Reflow Temperature-Max (s) 40
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 83W
Case Connection COLLECTOR
Transistor Application SWITCHING
Gain Bandwidth Product 50MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 80V
Max Collector Current 15A
DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 4A 1V
JEDEC-95 Code TO-220AB
Vce Saturation (Max) @ Ib, Ic 400mV @ 400mA, 8A
Collector Emitter Breakdown Voltage 80V
Transition Frequency 50MHz
Collector Emitter Saturation Voltage 800mV
Collector Base Voltage (VCBO) 80V
Emitter Base Voltage (VEBO) 7V
hFE Min 35
Height 15.75mm
Length 10.28mm
Width 4.82mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.92000 $0.92
50 $0.78400 $39.2
100 $0.64830 $64.83
500 $0.53960 $269.8
1,000 $0.43090 $0.4309
D44VH10G Product Details

D44VH10G Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 20 @ 4A 1V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 800mV.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 400mV @ 400mA, 8A.The emitter base voltage can be kept at 7V for high efficiency.Its current rating is 15A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.In the part, the transition frequency is 50MHz.A maximum collector current of 15A volts can be achieved.

D44VH10G Features


the DC current gain for this device is 20 @ 4A 1V
a collector emitter saturation voltage of 800mV
the vce saturation(Max) is 400mV @ 400mA, 8A
the emitter base voltage is kept at 7V
the current rating of this device is 15A
a transition frequency of 50MHz

D44VH10G Applications


There are a lot of ON Semiconductor D44VH10G applications of single BJT transistors.

  • Muting
  • Interface
  • Inverter
  • Driver

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