D44VH10G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
D44VH10G Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
9 Weeks
Lifecycle Status
ACTIVE (Last Updated: 13 hours ago)
Contact Plating
Tin
Mounting Type
Through Hole
Package / Case
TO-220-3
Surface Mount
NO
Number of Pins
3
Weight
4.535924g
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Published
2005
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Subcategory
Other Transistors
Voltage - Rated DC
80V
Max Power Dissipation
83W
Peak Reflow Temperature (Cel)
260
Current Rating
15A
Frequency
50MHz
[email protected] Reflow Temperature-Max (s)
40
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power Dissipation
83W
Case Connection
COLLECTOR
Transistor Application
SWITCHING
Gain Bandwidth Product
50MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
80V
Max Collector Current
15A
DC Current Gain (hFE) (Min) @ Ic, Vce
20 @ 4A 1V
JEDEC-95 Code
TO-220AB
Vce Saturation (Max) @ Ib, Ic
400mV @ 400mA, 8A
Collector Emitter Breakdown Voltage
80V
Transition Frequency
50MHz
Collector Emitter Saturation Voltage
800mV
Collector Base Voltage (VCBO)
80V
Emitter Base Voltage (VEBO)
7V
hFE Min
35
Height
15.75mm
Length
10.28mm
Width
4.82mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.92000
$0.92
50
$0.78400
$39.2
100
$0.64830
$64.83
500
$0.53960
$269.8
1,000
$0.43090
$0.4309
D44VH10G Product Details
D44VH10G Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 20 @ 4A 1V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 800mV.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 400mV @ 400mA, 8A.The emitter base voltage can be kept at 7V for high efficiency.Its current rating is 15A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.In the part, the transition frequency is 50MHz.A maximum collector current of 15A volts can be achieved.
D44VH10G Features
the DC current gain for this device is 20 @ 4A 1V a collector emitter saturation voltage of 800mV the vce saturation(Max) is 400mV @ 400mA, 8A the emitter base voltage is kept at 7V the current rating of this device is 15A a transition frequency of 50MHz
D44VH10G Applications
There are a lot of ON Semiconductor D44VH10G applications of single BJT transistors.