MCH6123-TL-E datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
MCH6123-TL-E Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
4 Weeks
Lifecycle Status
LAST SHIPMENTS (Last Updated: 1 week ago)
Mounting Type
Surface Mount
Package / Case
6-SMD, Flat Leads
Number of Pins
6
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2012
JESD-609 Code
e6
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Terminal Finish
Tin/Bismuth (Sn/Bi)
Max Power Dissipation
1W
Pin Count
6
Number of Elements
1
Power Dissipation
1W
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
650mV
Max Collector Current
3A
DC Current Gain (hFE) (Min) @ Ic, Vce
200 @ 100mA 2V
Current - Collector Cutoff (Max)
1μA ICBO
Vce Saturation (Max) @ Ib, Ic
650mV @ 100mA, 2A
Collector Emitter Breakdown Voltage
50V
Frequency - Transition
390MHz
Collector Base Voltage (VCBO)
50V
Emitter Base Voltage (VEBO)
-6V
hFE Min
200
RoHS Status
RoHS Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.669835
$0.669835
10
$0.631920
$6.3192
100
$0.596151
$59.6151
500
$0.562407
$281.2035
1000
$0.530572
$530.572
MCH6123-TL-E Product Details
MCH6123-TL-E Overview
This device has a DC current gain of 200 @ 100mA 2V, which is the ratio between the collector current and the base current.When VCE saturation is 650mV @ 100mA, 2A, transistor means Ic has reached transistors maximum value (saturated).With the emitter base voltage set at -6V, an efficient operation can be achieved.Collector current can be as low as 3A volts at its maximum.
MCH6123-TL-E Features
the DC current gain for this device is 200 @ 100mA 2V the vce saturation(Max) is 650mV @ 100mA, 2A the emitter base voltage is kept at -6V
MCH6123-TL-E Applications
There are a lot of ON Semiconductor MCH6123-TL-E applications of single BJT transistors.