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2N3563

  • 2N3563
  • 2N3563

2N3563

2N3563

Central Semiconductor Corp

2N3563 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Central Semiconductor Corp stock available on our website

SOT-23

2N3563 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-106-3 Domed
Surface Mount NO
Transistor Element Material SILICON
Packaging Bulk
JESD-609 Code e0
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
Subcategory Other Transistors
Terminal Position BOTTOM
Terminal Form WIRE
Reach Compliance Code not_compliant
Pin Count 3
JESD-30 Code O-MBCY-W4
Qualification Status Not Qualified
Operating Temperature (Max) 125°C
Number of Elements 1
Configuration SINGLE
Transistor Application AMPLIFIER
Polarity/Channel Type NPN
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 8mA 10V
Current - Collector Cutoff (Max) 50nA ICBO
Voltage - Collector Emitter Breakdown (Max) 12V
Transition Frequency 600MHz
Frequency - Transition 600MHz
Power Dissipation-Max (Abs) 0.2W
Collector-Base Capacitance-Max 1.7pF
RoHS Status Non-RoHS Compliant
2N3563 Product Details

2N3563 Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 20 @ 8mA 10V DC current gain.In the part, the transition frequency is 600MHz.The device exhibits a collector-emitter breakdown at 12V.

2N3563 Features


the DC current gain for this device is 20 @ 8mA 10V
a transition frequency of 600MHz

2N3563 Applications


There are a lot of Central Semiconductor Corp 2N3563 applications of single BJT transistors.

  • Driver
  • Inverter
  • Interface
  • Muting

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