JANTXV2N5415 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website
SOT-23
JANTXV2N5415 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
20 Weeks
Lifecycle Status
IN PRODUCTION (Last Updated: 1 month ago)
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-205AA, TO-5-3 Metal Can
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-65°C~200°C TJ
Packaging
Bulk
Series
Military, MIL-PRF-19500/485
JESD-609 Code
e0
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
4
ECCN Code
EAR99
Terminal Finish
Tin/Lead (Sn/Pb)
HTS Code
8541.21.00.95
Max Power Dissipation
750mW
Terminal Position
BOTTOM
Terminal Form
WIRE
Reference Standard
MILITARY STANDARD (USA)
JESD-30 Code
O-MBCY-W4
Qualification Status
Qualified
Number of Elements
1
Configuration
SINGLE
Case Connection
COLLECTOR
Power - Max
750mW
Transistor Application
SWITCHING
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
200V
Max Collector Current
1A
DC Current Gain (hFE) (Min) @ Ic, Vce
30 @ 50mA 10V
Current - Collector Cutoff (Max)
1mA
Vce Saturation (Max) @ Ib, Ic
2V @ 5mA, 50mA
Collector Base Voltage (VCBO)
200V
Turn Off Time-Max (toff)
10000ns
Turn On Time-Max (ton)
1000ns
Radiation Hardening
No
RoHS Status
Non-RoHS Compliant
Lead Free
Contains Lead
Pricing & Ordering
Quantity
Unit Price
Ext. Price
107
$16.68972
$1785.80004
JANTXV2N5415 Product Details
JANTXV2N5415 Overview
This device has a DC current gain of 30 @ 50mA 10V, which is the ratio between the collector current and the base current.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 2V @ 5mA, 50mA.In extreme cases, the collector current can be as low as 1A volts.
JANTXV2N5415 Features
the DC current gain for this device is 30 @ 50mA 10V the vce saturation(Max) is 2V @ 5mA, 50mA
JANTXV2N5415 Applications
There are a lot of Microsemi Corporation JANTXV2N5415 applications of single BJT transistors.