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2N2219A PBFREE

2N2219A PBFREE

2N2219A PBFREE

Central Semiconductor Corp

2N2219A PBFREE datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Central Semiconductor Corp stock available on our website

SOT-23

2N2219A PBFREE Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 20 Weeks
Mounting Type Through Hole
Package / Case TO-205AD, TO-39-3 Metal Can
Operating Temperature-65°C~200°C TJ
PackagingBulk
JESD-609 Code e3
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish Matte Tin (Sn)
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Power - Max 800mW
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA 10V
Current - Collector Cutoff (Max) 10nA ICBO
Vce Saturation (Max) @ Ib, Ic 1V @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max) 40V
Current - Collector (Ic) (Max) 800mA
Frequency - Transition 300MHz
RoHS StatusROHS3 Compliant
In-Stock:3182 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$2.48000$2.48
500$2.4552$1227.6
1000$2.4304$2430.4
1500$2.4056$3608.4
2000$2.3808$4761.6
2500$2.356$5890

2N2219A PBFREE Product Details

2N2219A PBFREE Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 100 @ 150mA 10V DC current gain.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1V @ 50mA, 500mA.There is a 40V maximal voltage in the device due to collector-emitter breakdown.

2N2219A PBFREE Features


the DC current gain for this device is 100 @ 150mA 10V
the vce saturation(Max) is 1V @ 50mA, 500mA

2N2219A PBFREE Applications


There are a lot of Central Semiconductor Corp 2N2219A PBFREE applications of single BJT transistors.

  • Driver
  • Inverter
  • Interface
  • Muting

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