2N3792 PBFREE datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Central Semiconductor Corp stock available on our website
SOT-23
2N3792 PBFREE Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
22 Weeks
Mounting Type
Through Hole
Package / Case
TO-204AA, TO-3
Operating Temperature
-65°C~200°C TJ
Packaging
Tube
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Terminal Finish
MATTE TIN OVER NICKEL
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Power - Max
150W
Transistor Type
PNP
DC Current Gain (hFE) (Min) @ Ic, Vce
50 @ 1A 2V
Vce Saturation (Max) @ Ib, Ic
1V @ 500mA, 5A
Voltage - Collector Emitter Breakdown (Max)
80V
Current - Collector (Ic) (Max)
10A
Frequency - Transition
4MHz
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$5.933280
$5.93328
10
$5.597433
$55.97433
100
$5.280598
$528.0598
500
$4.981696
$2490.848
1000
$4.699713
$4699.713
2N3792 PBFREE Product Details
2N3792 PBFREE Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 50 @ 1A 2V.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).This device displays a 80V maximum voltage - Collector Emitter Breakdown.
2N3792 PBFREE Features
the DC current gain for this device is 50 @ 1A 2V the vce saturation(Max) is 1V @ 500mA, 5A
2N3792 PBFREE Applications
There are a lot of Central Semiconductor Corp 2N3792 PBFREE applications of single BJT transistors.