BC807-40LT1G Overview
In this device, the DC current gain is 250 @ 100mA 1V, which is the ratio between the base current and the collector current.With a collector emitter saturation voltage of -700mV, it offers maximum design flexibility.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 700mV @ 50mA, 500mA.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.Input voltage breakdown is available at 45V volts.Single BJT transistor is possible for the collector current to fall as low as 500mA volts at Single BJT transistors maximum.
BC807-40LT1G Features
the DC current gain for this device is 250 @ 100mA 1V
a collector emitter saturation voltage of -700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
BC807-40LT1G Applications
There are a lot of ON Semiconductor BC807-40LT1G applications of single BJT transistors.
- Muting
- Inverter
- Interface
- Driver
