SMBT35200MT1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
SMBT35200MT1G Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
14 Weeks
Lifecycle Status
ACTIVE (Last Updated: 1 week ago)
Mounting Type
Surface Mount
Package / Case
SOT-23-6
Surface Mount
YES
Number of Pins
6
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2005
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Subcategory
Other Transistors
Max Power Dissipation
625mW
Pin Count
6
Configuration
Single
Power - Max
625mW
Halogen Free
Halogen Free
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
310mV
Max Collector Current
2A
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 1.5A 1.5V
Current - Collector Cutoff (Max)
100nA
Vce Saturation (Max) @ Ib, Ic
310mV @ 20mA, 2A
Collector Emitter Breakdown Voltage
35V
Transition Frequency
100MHz
Frequency - Transition
100MHz
Collector Base Voltage (VCBO)
55V
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$1.594865
$1.594865
10
$1.504590
$15.0459
100
$1.419425
$141.9425
500
$1.339079
$669.5395
1000
$1.263283
$1263.283
SMBT35200MT1G Product Details
SMBT35200MT1G Overview
This device has a DC current gain of 100 @ 1.5A 1.5V, which is the ratio between the base current and the collector current.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 310mV @ 20mA, 2A.100MHz is present in the transition frequency.The maximum collector current is 2A volts.
SMBT35200MT1G Features
the DC current gain for this device is 100 @ 1.5A 1.5V the vce saturation(Max) is 310mV @ 20mA, 2A a transition frequency of 100MHz
SMBT35200MT1G Applications
There are a lot of ON Semiconductor SMBT35200MT1G applications of single BJT transistors.